| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory system for making test-free a memory device on which an error detection/correction system is loaded. SOLUTION: The memory system includes: a memory device; an error detection/correction system loaded on the memory device for generating an error correction impossibility signal when error correction is impossible; an address generation circuit for generating an internal address which advances so as not to collide with the address advance and address generation first stage of the memory device instead of a defective region address whose error correction is impossible based on the error correction impossibility signal to be generated by the error detection/correction system; and a content reference memory to be referenced when the memory device is accessed for storing an internal address to be generated by the address generation circuit as an alternative region address to be generated instead of the defective region address based on an error invalidation signal to be generated by the error detection/correction system. COPYRIGHT: (C)2009,JPO&INPIT
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