发明名称 |
FABRICATION OF SEMICONDUCTOR DEVICES USING ANTI-REFLECTIVE COATINGS |
摘要 |
Techniques are disclosed for fabricating a device using a photolithographic process. The method includes providing a first anti-reflective coating over a surface of a substrate. A layer which is transparent to a wavelength of light used during the photolithographic process is provided over the first anti-reflective coating, and a photosensitive material is provided above the transparent layer. The photosensitive material is exposed to a source of radiation including the wavelength of light. Preferably, the first anti-reflective coating extends beneath substantially the entire transparent layer. The complex refractive index of the first anti-reflective coating can be selected to maximize the absorption at the first anti-reflective coating to reduce notching of the photosensitive material.
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申请公布号 |
US2009203206(A1) |
申请公布日期 |
2009.08.13 |
申请号 |
US20070698072 |
申请日期 |
2007.01.26 |
申请人 |
SANDHU GURTEJ S;YIN ZHIPING |
发明人 |
SANDHU GURTEJ S.;YIN ZHIPING |
分类号 |
H01L21/44;G03F7/09;H01L21/027;H01L21/314;H01L21/316;H01L21/768 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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