TRI-GATE DEVICES AND METHODS OF FABRICATION

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a semiconductor body having a top surface sidewalls on both right and left sides formed on a substrate, and its fabrication method. SOLUTION: A gate dielectric layer is formed on the top surface of the semiconductor body and on the sidewalls on both right and left sides of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and is formed adjacently to the gate dielectric on the sidewalls on both the right and left sides of the semiconductor body. COPYRIGHT: (C)2009,JPO&INPIT