| 摘要 |
This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
|
