<p>Provided is a semiconductor device which has an improved withstand voltage and can be manufactured by simpler manufacturing process. The semiconductor device is provided with a SiC-containing n type epitaxial layer (1) which is laminated on a surface of an n+ type substrate (11) containing SiC; n+ type source regions (5) arranged on a surface layer of the epitaxial layer (1) with a space in between; a p type well contact region (2) sandwiched between the source regions (5); a p type well region (3) arranged in contact with the surfaces, which are of the source regions (5) and the p type well contact region (2) and on the side of the substrate (11); and p-type well extension region (4) arranged to sandwich the source region (5) and the p type well region (3). As for impurity concentration of the p type well region (3), the concentration peak in the depth direction from the surface of the epitaxial layer (1) toward the substrate (11) is at a position deeper than that of the p type well extension region (4).</p>
