BACKSIDE ILLUMINATED IMAGE SENSOR WITH GLOBAL SHUTTER AND STORAGE CAPACITOR

摘要

A backside illuminated imaging sensor pixel includes a photodiode region, a pixel circuitry region, and a storage capacitor. The photodiode region is disposed within a semiconductor die for accumulating an image charge. The pixel circuitry region is disposed on the semiconductor die between a frontside of the semiconductor die and the photodiode region. The pixel circuitry region overlaps at least a portion of the photodiode region. The storage capacitor is included within the pixel circuitry region overlapping the photodiode region and is selectively coupled to the photodiode region to temporarily store image charges accumulated thereon.