SEMICONDUCTOR MANUFACTIRING METHOD

摘要

It is impossible to form a gate length and the height of a pillar-shaped semiconductor layer to be stable since it is impossible to control the amount of etching using terminal point detection in dry etching for forming the pillar-shaped semiconductor layer and an electrode in a conventional SGT manufacturing method. According to the manufacturing method, it is possible to use the terminal point detection in the etching of the pillar-shaped semiconductor layer by allowing a hard mask to have a laminate structure of a first hard mask and a second hard mask at the time of dry etching for forming the pillar-shaped semiconductor layer. Further,it is possible to use the terminal point detection in the etching of a gate electrode by allowing a gate conductive film to have a laminate structure of a first gate conductive film and a second gate conductive film at the time of dry etching for forming the gate electrode.