发明名称 |
METHOD OF MANUFACTURING CRYSTALLINE SILICON SOLAR CELLS WITH IMPROVED SURFACE PASSIVATION. |
摘要 |
<p>The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising: - providing a crystalline silicon substrate having a front side and a back side; - forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution; - forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.</p> |
申请公布号 |
MX2009003195(A) |
申请公布日期 |
2009.08.13 |
申请号 |
MX20090003195 |
申请日期 |
2007.09.20 |
申请人 |
ECN ENERGIEONDERZOEK CENTRUM NEDERLAND |
发明人 |
YUJI KOMATSU;JOHAN LAMBERT GEERLIGS;DAN VALENTIN MIHAILETCHI |
分类号 |
H01L31/18;H01L31/0216 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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