发明名称 METHOD OF MANUFACTURING CRYSTALLINE SILICON SOLAR CELLS WITH IMPROVED SURFACE PASSIVATION.
摘要 <p>The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising: - providing a crystalline silicon substrate having a front side and a back side; - forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution; - forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.</p>
申请公布号 MX2009003195(A) 申请公布日期 2009.08.13
申请号 MX20090003195 申请日期 2007.09.20
申请人 ECN ENERGIEONDERZOEK CENTRUM NEDERLAND 发明人 YUJI KOMATSU;JOHAN LAMBERT GEERLIGS;DAN VALENTIN MIHAILETCHI
分类号 H01L31/18;H01L31/0216 主分类号 H01L31/18
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