发明名称 METHOD FOR FABRICATION OF POLYCRYSTALLINE DIODES FOR RESISTIVE MEMORIES
摘要 The present invention, in one embodiment, provides a method of producing a PN junction the method including at least the steps of providing a Si-containing substrate; forming an insulating layer on the Si-containing substrate; forming a via through the insulating layer to expose at least a portion of the Si-containing substrate; forming a seed layer of the exposed portion of the Si containing substrate; forming amorphous Si on at least the seed layer; converting at least a portion of the amorphous Si to provide crystalline Si; and forming a first dopant region abutting a second dopant region in the crystalline Si.
申请公布号 US2009200534(A1) 申请公布日期 2009.08.13
申请号 US20080027675 申请日期 2008.02.07
申请人 IBM CORPORATION;MACRONIX INTERNATIONAL CO., LTD.;QIMONDA AG 发明人 RAJENDRAN BIPIN;HAPP THOMAS;LUNG HSIANG-LAN;YANG MIN
分类号 H01L47/00;H01L21/36 主分类号 H01L47/00
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