发明名称 Programming device for non-volatile memory and programming method thereof
摘要 The invention presents a programming method for a non-volatile memory with a bit signal to be programmed unidirectionally. The method includes the steps of a) providing first data each having a first number of sequential bits of first status in a data page in a non-volatile memory, b) decoding the first number of sequential bits of the first status in the first data into a second number of sequential bits of second status, and c) programming second data in a portion of the data page where the first status has been decoded to the second status.
申请公布号 US2009204745(A1) 申请公布日期 2009.08.13
申请号 US20080068587 申请日期 2008.02.08
申请人 PHISON ELECTRONICS CORP. 发明人 YU HSIANG-HSIUNG
分类号 G06F12/00 主分类号 G06F12/00
代理机构 代理人
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