发明名称 Light emitting element and manufacturing method thereof
摘要 In a laser chip 1 using a nitride semiconductor having a hexagonal crystal structure, the -c plane is used as a first resonator facet A, which is the side of the laser chip 1 through which light is emitted. On the first resonator facet A, that is, on the -c plane, a facet protection film 14 is formed. This ensures firm joint between the first resonator facet A and the facet protection film 14 and alleviates deterioration of the first resonator facet A.
申请公布号 US2009200573(A1) 申请公布日期 2009.08.13
申请号 US20080314214 申请日期 2008.12.05
申请人 KAWAKAMI TOSHIYUKI;KAWAGUCHI YOSHINOBU;KAMIKAWA TAKESHI 发明人 KAWAKAMI TOSHIYUKI;KAWAGUCHI YOSHINOBU;KAMIKAWA TAKESHI
分类号 H01L21/20;H01S5/028;H01S5/22;H01S5/343 主分类号 H01L21/20
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