发明名称 |
Light emitting element and manufacturing method thereof |
摘要 |
In a laser chip 1 using a nitride semiconductor having a hexagonal crystal structure, the -c plane is used as a first resonator facet A, which is the side of the laser chip 1 through which light is emitted. On the first resonator facet A, that is, on the -c plane, a facet protection film 14 is formed. This ensures firm joint between the first resonator facet A and the facet protection film 14 and alleviates deterioration of the first resonator facet A.
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申请公布号 |
US2009200573(A1) |
申请公布日期 |
2009.08.13 |
申请号 |
US20080314214 |
申请日期 |
2008.12.05 |
申请人 |
KAWAKAMI TOSHIYUKI;KAWAGUCHI YOSHINOBU;KAMIKAWA TAKESHI |
发明人 |
KAWAKAMI TOSHIYUKI;KAWAGUCHI YOSHINOBU;KAMIKAWA TAKESHI |
分类号 |
H01L21/20;H01S5/028;H01S5/22;H01S5/343 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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