发明名称 |
DOUBLE MASK SELF-ALIGNED DOUBLE PATTERNING TECHNOLOGY (SADPT) PROCESS |
摘要 |
<p>A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.</p> |
申请公布号 |
WO2009099769(A2) |
申请公布日期 |
2009.08.13 |
申请号 |
WO2009US31713 |
申请日期 |
2009.01.22 |
申请人 |
LAM RESEARCH CORPORATION;SADJADI, S.M. REZA;LI, LUMIN;ROMANO, ANDREW, R. |
发明人 |
SADJADI, S.M. REZA;LI, LUMIN;ROMANO, ANDREW, R. |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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