发明名称 |
MANUFACTURING METHOD OF SILICON CARBIDE POWDER FOR GRINDING/POLISHING, AND SILICON CARBIDE POWDER FOR GRINDING/POLISHING, AND SLURRY FOR GRINDING/POLISHING |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of silicon carbide powder for polishing, with which the silicon carbide powder is highly purified by simply removing silicon oxide adhering to the surface of the silicon carbide powder or unreacted silicon and carbon admixing with the silicon carbide powder. SOLUTION: The manufacturing method of silicon carbide powder for grinding/polishing includes: a first step to dip the raw silicon carbide powder obtained by making silicon and carbon directly react with each other into an aqueous hydrofluoric acid solution 2 so as to make the surface of the silicon carbide powder water repellent by dissolving and removing the silicon oxide adhered thereto; and a second step to classify the silicon carbide powder so as to make particle sizes and shapes of the silicon carbide powder uniform after the first step. A step to remove carbon powder by treating the raw silicon carbide powder in hot water may be added as a pretreatment step of the first step. COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009179726(A) |
申请公布日期 |
2009.08.13 |
申请号 |
JP20080020385 |
申请日期 |
2008.01.31 |
申请人 |
TKX:KK |
发明人 |
OKUYAMA JIN;TOKUDA RYUICHI |
分类号 |
C09K3/14;B24B37/00;H01L21/304 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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