WIRING LINE CONTACT STRUCTURE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a wiring line contact structure which is formed with a low resistance material while having a low resistance contact characteristic, to provide a manufacturing method thereof, to provide a thin film transistor substrate including the wiring line contact structure of an excellent contact characteristic, and to provide a manufacturing method thereof. SOLUTION: The wiring line contact structure forming method includes: a process of forming a wiring line having an opening on a substrate; a process of laminating an insulating film covering the wiring line; a process of patterning the insulating film to form a contact hole exposing the opening; and a process of forming a first conductive layer in contact with the wiring line through the contact hole on the insulating film. COPYRIGHT: (C)2009,JPO&INPIT