| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory which has excellent element characteristics such that inter-cell interference is suppressed by seamlessly filling gaps between adjacent word lines, and to provide a manufacturing method thereof. SOLUTION: O<SB>3</SB>-TEOS films are buried as insulating films filling the gaps between the adjacent word lines of the flash memory and, particularly, O<SB>3</SB>-TEOS films 109 having base dependency are seamlessly buried in the gaps between the adjacent word lines on bit lines. COPYRIGHT: (C)2009,JPO&INPIT
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