| 摘要 |
PROBLEM TO BE SOLVED: To improve the resolution of an image picked up by a back face irradiation type solid-state imaging element, and to eliminate color mixture. SOLUTION: In this back-surface irradiation solid-state imaging element, wherein a plurality of photodiodes 3 are formed in a two-dimensional array-like form on a first surface side of a semiconductor substrate 2, and signal charge generated by a light which entered from a second surface side of the semiconductor substrate 2 is detected by the respective photodiodes 3, element isolation regions 31, having grooves of trench structures isolating the respective photodiodes 3 from the photodiodes 3 adjacent to them, are formed on the second surface side. By the trench grooves, diffusion of the signal charge in an adjacent pixel direction, and leakage of incident light in the adjacent pixel direction are suppressed. COPYRIGHT: (C)2009,JPO&INPIT
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