| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which allows a shallow n-type impurity diffusion region to be formed on a germanium layer. SOLUTION: The semiconductor device includes a p-type semiconductor mainly made of a germanium, a pair of n-type impurity diffusion regions selectively formed on the surface of the p-type semiconductor, a gate insulating layer formed on the p-type semiconductor disposed between the pair of n-type impurity diffusion regions, and a gate electrode formed on the gate insulating layer. At least part of the n-type impurity diffusion regions contains either a silicon or a carbon that is selected as an additive element from the silicon and carbon. COPYRIGHT: (C)2009,JPO&INPIT
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