| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a reflection preventing film whose reflectance in an ultraviolet wavelength region is sufficiently low. <P>SOLUTION: Silicon oxide as an inorganic material is heated and evaporated from the main material boat 4 by an electron beam in an evacuated treatment chamber 1, so as to produce evaporated grains. A mixed gas with a siloxane gas as a plasma gas organic material is introduced into the treatment chamber 1, high frequency power is fed to an electrode 7 for plasma generation, and a polymerized film of silicon oxide with siloxane as a binder is formed on the surface of a base material 9 by an ion plating method. Siloxane has high absorption of light in an ultraviolet wavelength region, can reduce reflectance, and further, has a high polymerization degree, thus its adhesion to the base material 9 is made satisfactory. <P>COPYRIGHT: (C)2009,JPO&INPIT |
