| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin-film transistor by using a transparent inorganic/polymer composite layer facilitating the change of a dielectric constant as a gate insulation layer, by forming and binding metal oxide nanoparticles in a photocurable transparent polymer by sol-gel and photocuring reactions. SOLUTION: This organic thin-film transistor uses a photocurable transparent inorganic/polymer composite layer 30 which is a gate insulator, and containing metal oxide nanoparticles having a dielectric constant very high relative to that of an existing gate insulator, and being readily adjustable; being able to increase an on/off current ratio while lowering a drive voltage; allowing the thickness of the gate insulator to be increased, without lowering the electrical capacitance by the high dielectric constant; and exerts excelling characteristics as an organic thin-film transistor by minimizing the leakage current. Since the thin-film transistor maintains the characteristics of a photocurable transparent polymer 70, as it is, thereby allowing a photocurable and minute pattern to be formed, and exhibits high processability. COPYRIGHT: (C)2009,JPO&INPIT
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