发明名称 Masked laser anneal during fabrication of backside illuminated image sensors
摘要 A technique for fabricating an array of imaging pixels includes fabricating front side components on a front side of the array. After fabricating the front side components, a dopant layer is implanted on a backside of the array. A mask is formed over the dopant layer to selectively expose portions of the dopant layer. Next, the exposed portions of the dopant layer are laser annealed. Alternatively, the mask may be disposed over the backside prior to the formation of the dopant layer and the dopants implanted through the exposed portions and subsequently laser annealed.
申请公布号 US2009200587(A1) 申请公布日期 2009.08.13
申请号 US20080178552 申请日期 2008.07.23
申请人 OMNIVISION TECHNOLOGIES, INC. 发明人 VENEZIA VINCENT;TAI HSIN-CHIH;MAO DULI;QIAN YIN
分类号 H01L33/00;H01L21/00 主分类号 H01L33/00
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