SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A semiconductor device having a VIA hole without disconnection caused by step is achieved. A semiconductor device and its manufacturing method, the semiconductor device comprising: a semi-insulating substrate 11 in which an electrode (12) is formed on a surface (11a) of one side and in which an aperture (11c) passed through from the surface 11a of one side to a surface (11b) of another side is formed; and a conductive layer (17) formed in an inner surface of the aperture (11c), and electrically connected with the electrode (12); wherein the aperture (11c) has a tapered region (11d) where an inside diameter of a part located in the surface (11b) of another side is larger than an inside diameter of a part located in the surface (11a) of one side.