| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the electrode of a light emitting diode element having a low contact resistance and exhibiting excellent reliability by suppressing deterioration in characteristics due to oxidation of the electrode metal, and to provide a light emitting diode. <P>SOLUTION: The electrodes 7 and 8 of an InGaN light emitting diode 10 have Si<SB>3</SB>N<SB>4</SB>protective films 9A and 9B for preventing oxidation formed on the surface wherein the Si<SB>3</SB>N<SB>4</SB>protective films 9A and 9B are covering an Au pad electrode layer 7b, an Al pad electrode layer 8b, and an Ni ohmic electrode layer 7a, a Ti ohmic electrode layer 8a. Deterioration is prevented even if a metal susceptible to oxidation and being rendered nonconductive easily is employed as an electrode material constituting the Ni ohmic electrode layer 7a, the Ti ohmic electrode layer 8a and the Au pad electrode layer 7b, the Al pad electrode layer 8b. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
