| 摘要 |
<p>A semiconductor device is provided to reduce deterioration of a rectifying circuit by preventing a stress of a transistor due to an AC signal. A semiconductor layer(201) includes a first region, a second region, a third region, and a channel region. The first region and the second region include a dopant element which gives n-type conductivity. The third region is positioned between the first region and the second region. The channel region is positioned between the first region and the third region. A gate electrode(202) is overlapped with the semiconductor layer. A gate insulation film is interposed between the semiconductor layer and the gate electrode. The first region is electrically connected to the gate electrode through a first electrode(203). The second region is electrically connected to an electrode of a capacitive device through a second electrode(204). The channel region is contacted with the first region. The third region is overlapped with the gate electrode.</p> |
