| 摘要 |
<p>A semiconductor device, an electro optic device, an electronic device, a method for manufacturing the semiconductor device, a method for manufacturing the electro optical device, and a method for manufacturing the electronic device are provided to prevent a crack of a base insulating layer by reducing mechanical or thermal stress applied to the base insulating film. A semiconductor device includes a substrate, a base insulating layer(15), and a plurality of thin film transistors(T). The base insulating layer is formed on the substrate. A plurality of thin film transistors are formed on the base insulating layer. Each thin film transistor includes a semiconductor layer and a gate electrode. The semiconductor layer is formed on the base insulating layer. The gate electrode is formed on the semiconductor layer. The gate insulating layer is interposed between the semiconductor layer and the gate electrode. The base insulating layer is formed on the plurality of regions including at least one semiconductor layer.</p> |
