发明名称 |
Air-gap type thin-film bulk acoustic resonator and fabrication method therefor |
摘要 |
An air-gap type thin-film bulk acoustic resonator has a substrate having a cavity formed on a predetermined portion of an upper surface thereof; a resonance part having a structure of a first electrode, a piezoelectric substance, and a second electrode deposited in order and formed over the upper side of the cavity; and at least one via hole penetrating a lower surface of the substrate and connecting to the cavity. <IMAGE> |
申请公布号 |
EP1598933(B1) |
申请公布日期 |
2009.08.12 |
申请号 |
EP20050253013 |
申请日期 |
2005.05.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG, IN-SANG;HA, BYEOUNG-JU;PARK, YUN-KWON;KIM, JONG-SEOK |
分类号 |
H01L41/09;H03H9/17;H01L41/187;H01L41/22;H03H3/02;H03H9/24;H03H9/56 |
主分类号 |
H01L41/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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