| 摘要 |
A method for evaluating an insulating layer and a measuring circuit are provided to reduce a measuring time by performing a dielectric breakdown test of a positive polarity and a negative polarity for the insulating layer. A first MOS diode includes a first diffusion layer(21), a first insulating layer(31), and a first electrode(41). The first diffusion layer is formed on the semiconductor substrate. The first insulating layer is formed on the first diffusion layer. The first electrode is formed on the first insulating layer. A second MOS diode includes a second diffusion layer(22), a second insulating layer(32), and a second electrode(42). The second diffusion layer is adjacent to the first diffusion layer. The second insulating layer is formed on the second diffusion layer. The second electrode is formed on the second insulating layer. The first terminal is connected to the first electrode and the second diffusion layer. The second terminal is connected to the second electrode and the first diffusion layer. The current source is formed between the first terminal and the second terminal. A voltmeter is arranged in parallel to the current source. |
