METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to uniformize the thickness of an insulating layer on a large substrate by using a high density plasma device. A substrate is heated(S171). The plasma ignition gas is supplied to a process container(S172). The pressure inside the process container is controlled(S173). A microwave generator is turned on to generate the plasma(S174). The source gas is supplied to the process container(S175). The microwave generator is turned off(S176). The plasma ignition gas is supplied to the process container(S177). The microwave generator is turned on to generate the plasma(S179). The source gas is supplied to the process container(S180). The microwave generator is turned off(S181).