发明名称 PLASMA PROCESSING APPARATUS
摘要 A plasma processing apparatus is provided to improve plasma ignition and ignition stability by arranging a slot to a vertical top direction of a tilted surface. A plasma processing apparatus(11) includes a processing vessel(12) having a top opening, a dielectric(15), and an antenna(24). The dielectric has a tilted surface, and is arranged in order to close the top opening of the processing vessel. The tilted surface is tilted in order to consecutively change a thickness size of a bottom surface. The antenna is arranged on a top surface of the dielectric. The antenna generates plasma on the bottom surface of the dielectric by supplying a microwave to the dielectric. The antenna has a plurality of slots positioned in a vertical top direction of the tilted surface.
申请公布号 KR20090086356(A) 申请公布日期 2009.08.12
申请号 KR20090009977 申请日期 2009.02.06
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUMOTO NAOKI;YOSHIKAWA JUN;SASAKI MASARU;KATO KAZUYUKI;SHIKATA MASAFUMI;TAKAHASHI SHINGO
分类号 H05H1/34;H05H1/24;H05H1/30 主分类号 H05H1/34
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