| 摘要 |
A semiconductor device is provided to reduce the variation of characteristics by using angular dependency of the stress about the angel formed by a progressive direction of a carrier. A first transistor(10) and a second transistors(11) operate as one transistor. The first transistor has a first source electrode(4), a first gate electrode(6), a first drain electrode(8), a gate insulating layer and a channel region. A second transistor has a second source electrode(5), a second gate electrode(7), a second drain electrode(9), a gate insulating layer and a channel region. The first and second transistors are connected through the first and second source electrodes. The channel direction of the first transistor is vertical to one side of the semiconductor chip. The channel direction of the second transistor is parallel to one side of the semiconductor chip.
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