Semiconductor device and method for manufacturing the same

摘要

A semiconductor device includes a p-type active region and an n-type active region which are formed in a semiconductor substrate and a p-type MISFET including a gate insulating film (1006) formed on the p-type active region and a first gate electrode including a first electrode formation film (1015) of which upper part has a concentration of La higher than the other part thereof. The semiconductor device further includes an n-type MISFET including a gate insulating film (1006) formed on the n-type active region and a second gate electrode including a second electrode formation film (1014) of which upper part has a concentration of A1 higher than the other part thereof.