| 摘要 |
A method for manufacturing a semiconductor device is provided to form a metal wiring with a cross section shape by forming a sidewall protective film with a sufficient thickness. An interlayer insulating layer(103) is formed on a semiconductor substrate(102). A trench(100) is formed in the interlayer insulating layer and the semiconductor substrate. The trench has the opening. The diameter of the opening is twice as thick as the total of the thickness of the metal layer and the resist layer. An aspect ratio of the trench is 1 to 3. The metal layer is deposited on the surface of the interlayer insulating layer and the inner surface of the trench. The resist pattern is formed on the metal layer. The metal layer is etched to form a dummy metal wiring inside and around the metal wiring and the trench on the interlayer insulating layer. |
