发明名称 Imprint method for forming a relief layer and use of it as an etch mask
摘要 The invention relates to a method for forming a relief layer (216) employing a stamp (206) having a stamping surface (208) including a template relief pattern. A solution comprising a siliconoxide compound (200) is sandwiched between a substrate surface (202) and the stamp surface (208) and dried while sandwiched. After removal of the template relief pattern the relief layer obtained has a high inorganic mass content making it robust and directly usable for a number of applications such as semiconductor, optical or micromechanical.
申请公布号 EP2087403(A2) 申请公布日期 2009.08.12
申请号 EP20070826880 申请日期 2007.10.26
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 VERSCHUUREN, MARCUS A.
分类号 G03F7/00 主分类号 G03F7/00
代理机构 代理人
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