发明名称 MEMORY SYSTEM
摘要 <p>To provide a memory system which determines a memory state such as an exhaustion level and allows a memory to be efficiently used. The memory system includes a NAND type flash memory 1 in which data can be electrically written/erased, a nonvolatile memory 2 which counts the number of erase operations of the NAND type flash memory 1 and retains the number of erase operations and a maximum number of erase operations, and a controller 3 which has a connection interface 31 to be given a self-diagnosis command from a computer 4, and retrieves the number of erase operations and the maximum number of erase operations from the nonvolatile memory 2 based on the self-diagnosis command and outputs the number of erase operations and the maximum number of erase operations to the computer 4 through the connection interface 31.</p>
申请公布号 EP2088512(A1) 申请公布日期 2009.08.12
申请号 EP20070832620 申请日期 2007.11.28
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAGADOMI, YASUSHI;TAKASHIMA, DAISABURO;HATSUDA, KOSUKE;KANNO, SHINICHI
分类号 G06F12/16;G11C16/02 主分类号 G06F12/16
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