发明名称 |
Methods for transistor formation using selective gate implantation |
摘要 |
Methods are disclosed for semiconductor device fabrication in which dopants are selectively implanted into transistor gate structures to counteract or compensate for dopant depletion during subsequent fabrication processing. A patterned implant mask is formed over a semiconductor device, which exposes at least a portion of the gate structure and covers the remaining upper surfaces of the device. Thereafter, dopants are selectively implanted in to the exposed gate structure.
|
申请公布号 |
US7572693(B2) |
申请公布日期 |
2009.08.11 |
申请号 |
US20060462541 |
申请日期 |
2006.08.04 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JOHNSON F. SCOTT;GRIDER TAD;MCKEE BENJAMIN P. |
分类号 |
H01L21/8238;H01L21/04;H01L21/336;H01L21/8234 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|