发明名称 |
Semiconductor structure for fuse and anti-fuse applications |
摘要 |
A fuse/anti-fuse structure is provided in which programming of the anti-fuse is caused by an electromigation induced hillock that is formed adjacent to the fuse element. The hillock ruptures a thin diffusion barrier located on the sidewalls of the fuse element and the conductive material within the fuse element diffuses into the adjacent dielectric material. The fuse element includes a conductive material located within a line opening which includes a first diffusion barrier having a first thickness located on sidewalls and a bottom wall of the line opening. The anti-fuse element includes the conductive material located within a combined via and line opening which includes the first diffusion barrier located on sidewalls and a bottom wall of the combined via and line opening and a second diffusion barrier having a second thickness that is greater than the first thickness located on the first diffusion barrier.
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申请公布号 |
US7572682(B2) |
申请公布日期 |
2009.08.11 |
申请号 |
US20070755995 |
申请日期 |
2007.05.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO;EDELSTEIN DANIEL C.;MANDELMAN JACK A.;HSU LOUIS L. |
分类号 |
H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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