发明名称 Maskless photolithography for etching and deposition
摘要 The present invention relates to maskless photolithography using a patterned light generator for creating 2-D and 3-D patterns on objects using etching and deposition techniques. In an embodiment, the patterned light generator uses a micromirror array to direct pattern light on a target object. In an alternate embodiment, the patterned light generator uses a plasma display device to generate and direct patterned light onto a target object. Specifically, the invention provides a maskless photolithography system and method for photo stimulated etching of objects in a liquid solution, patterning glass, and photoselective metal deposition. For photo stimulated etching of objects in a liquid solution, the invention provides a system and method for immersing a substrate in an etchant solution, exposing the immersed substrate to patterned light, and etching the substrate according to the pattern of incident light. For patterning photoreactive glass, the invention provides a system and method for exposing photosensitive or photochromic glass, and washing the target glass with rinse and acid etchant solutions. For photoselective metal deposition, the invention provides a system and method for coating and rinsing a substrate prior to exposure exposing the substrate to a patterned light generator to activate areas corresponding to the incident light pattern, and plating the substrate in the area activated by the light after exposure. By providing a maskless pattern generator, the invention advantageously eliminates the problems associated with using masks for photo stimulated etching, patterning glass, and photoselective metal deposition.
申请公布号 US7572573(B2) 申请公布日期 2009.08.11
申请号 US20060343594 申请日期 2006.01.30
申请人 UNIVERSITY OF SOUTH FLORIDA 发明人 FRIES DAVID P.
分类号 C25D5/02;G03F7/004;G03F7/20 主分类号 C25D5/02
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