发明名称 |
Utilization of doped glass on the sidewall of the emitter window in a bipolar transistor structure |
摘要 |
A bipolar transistor device architecture and method of manufacture uses doped glass on the sidewall of the emitter window opening to reduce the emitter-base overlap capacitance while at the same time improving the polysilicon plugging effect. The doped glass sidewall also improves dopant loss in the oxide in the case in which an in-situ doped poly emitter is used. By using a doped sidewall glass, the sensitivity of dopant absorption that can potentially occur in un-doped spacers is removed. The proposed technique also provides a simple method for achieving narrow emitter window openings while simultaneously improving doping uniformity compared to implanted poly techniques. The technique also allows a self-aligned base to be performed, thereby allowing tighter spacing between the extrinsic base and the intrinsic base.
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申请公布号 |
US7572708(B1) |
申请公布日期 |
2009.08.11 |
申请号 |
US20070715634 |
申请日期 |
2007.03.08 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BABCOCK JEFF A.;ADLER STEVE;THIEBEAULT TODD;RAMDANI JAMAL |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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