发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device and method with a dual damascene pattern uses buffer layers to prevent photoresist layer poisoning due to a reaction between an interlayer dielectric and a photoresist layer. Embodiments also relate to reducing the effects of plasma damage occurring during an etching or ashing process.
申请公布号 US7572728(B2) 申请公布日期 2009.08.11
申请号 US20060616257 申请日期 2006.12.26
申请人 DONGBU HITEK CO., LTD. 发明人 KIM TAE WOO
分类号 H01L21/4763;H01L29/40 主分类号 H01L21/4763
代理机构 代理人
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