发明名称 Memory device having a power down exit register
摘要 A memory device including an array of memory cells, and a register circuit to store a value representative of a period of time to elapse before the memory device is ready to receive a command when recovering from a power down mode is provided in an embodiment. The command specifies an access to the array of memory cells. A delay lock loop circuit synchronizes data transfers using an external clock signal. The delay lock loop circuit reacquires synchronization with the external clock signal during the period of time.
申请公布号 US7574616(B2) 申请公布日期 2009.08.11
申请号 US20040944320 申请日期 2004.09.17
申请人 RAMBUS INC. 发明人 BARTH RICHARD M.;TSERN ELY K.;HAMPEL CRAIG E.;WARE FREDERICK A.;BYSTROM TODD W.;MAY BRADLEY A.;DAVIS PAUL G.
分类号 G06F1/26;G06F12/00;G06F13/16;G06F13/42;G11C7/10;G11C7/20;G11C11/4072;G11C11/4074;G11C11/4076 主分类号 G06F1/26
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