| 摘要 |
The present invention provides a method of forming a gate in a flash memory device. The method includes: forming a oxide layer on a semiconductor substrate; forming a stacked structure including a tunnel oxide layer, a floating gate, a dielectric layer, and a control gate by patterning them on the semiconductor substrate; exposing portions of the semiconductor substrate below the field oxide layer by selectively etching the field oxide layer adjacent to the source region in order to form a common source; performing subsequent etching for removing oxides between the control gates; and forming an oxide layer covering the semiconductor substrate and both sidewalls of the floating gate and control gate.
|
