发明名称 |
Non-collinear end-to-end structures with sub-resolution assist features |
摘要 |
Sub-resolution assist features for non-collinear features are described for use in photolithography. A photolithography mask with elongated features is synthesized. An end-to-end gap between two features if found for which the ends of the two features facing the gap are linearly offset from one another. A sub-resolution assist feature is applied to the end-to-end gap between the elongated features, and the synthesized photolithography mask is modified to include the sub-resolution assist feature.
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申请公布号 |
US7572557(B2) |
申请公布日期 |
2009.08.11 |
申请号 |
US20050297209 |
申请日期 |
2005.12.07 |
申请人 |
INTEL CORPORATION |
发明人 |
WALLACE CHARLES H.;DAVIESS SHANNON E.;SIVAKUMAR SWAMINATHAN |
分类号 |
G03F1/00;G06F17/50;H01L21/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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