发明名称 Non-collinear end-to-end structures with sub-resolution assist features
摘要 Sub-resolution assist features for non-collinear features are described for use in photolithography. A photolithography mask with elongated features is synthesized. An end-to-end gap between two features if found for which the ends of the two features facing the gap are linearly offset from one another. A sub-resolution assist feature is applied to the end-to-end gap between the elongated features, and the synthesized photolithography mask is modified to include the sub-resolution assist feature.
申请公布号 US7572557(B2) 申请公布日期 2009.08.11
申请号 US20050297209 申请日期 2005.12.07
申请人 INTEL CORPORATION 发明人 WALLACE CHARLES H.;DAVIESS SHANNON E.;SIVAKUMAR SWAMINATHAN
分类号 G03F1/00;G06F17/50;H01L21/00 主分类号 G03F1/00
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