| 摘要 |
A nitride based light emitting diode is provided to improve an in-plane compressive strain by doping Al to a quantum barrier layer of an active layer. A buffer layer(2-2) is formed on a substrate(2-1). A first conductive nitride semiconductor layer(2-3), an active layer(2-4), and a second conductive nitride semiconductor layer(2-5) are successively formed on the buffer layer. The first conductive nitride semiconductor layer and the second conductive nitride semiconductor layer is n-type or p-type nitride semiconductor layer. The active layer has a multi quantum well structure in which a quantum well layer and a quantum barrier layer are laminated by turns. The quantum barrier layer is doped into Al. |
