发明名称 |
METHOD FOR FORMING A THIN LAYER AND THIN LAYER FORMING APPARATUS FOR PERFORMING THE SAME |
摘要 |
A method for forming a thin film and a thin film forming apparatus for performing the same are provided to easily form a thin film on a substrate to be processed by maintaining temperature of the substrate to be processed under 200‹C. A thin film forming apparatus includes a reaction chamber(110), an energy supply part(120), and a gas supply part(130). The reaction chamber includes a heating part(112) and a cooling process part(117). The cooling process part controls temperature of the reaction chamber. The heating part activates a resource gas. The energy supply part supplies a power source to the heating part, and heats the heating part into set temperature. The gas supply part injects a first gas to the reaction chamber while heating the heating part. The first gas is a carrier gas or a source gas. If the temperature of the substrate to be processed is stabilized, the gas supply part injects a second gas to the reaction chamber. |
申请公布号 |
KR20090085717(A) |
申请公布日期 |
2009.08.10 |
申请号 |
KR20080011449 |
申请日期 |
2008.02.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION. |
发明人 |
YANG, SUNG HOON;YOON, KAP SOO;KIM, SUNG RYUL;HONG, WAN SHICK |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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