SINGLE CRYSTAL SI NANORIBBONS AND THE MANUFACTURING METHOD OF THE SAME

摘要

A single crystal silicon nano ribbon and a manufacturing method thereof are provided to be applied to an electronic device and an electric chemical device by performing a high specific surface region and high crystallinity. A titanium layer is formed on a silicon substrate. Thickness of the titanium layer is 10~30nm. A platinum layer is formed on the titanium layer. Thickness of the platinum layer is 1~10nm. A single crystal silicon nano ribbon is formed on the silicon substrate. A single crystal nano wire is grown into one direction(110). The single crystal silicon nano ribbon is grown into the other direction(1-12) from the single crystal silicon nano wire. The single crystal silicon nano ribbon has thickness of 5~50nm, and a width of 0.1~2um.