| 摘要 |
<p>A nonvolatile memory device and manufacturing the same is provided to perform gap filling of a trench insulating layer by forming the insulating layer on the wall of the trench and removing a process of forming a well oxide. In a nonvolatile memory device and manufacturing the same, a trench is generated on an element isolation region of a semiconductor substrate(102). A tunnel insulating layer(104) is formed in an active region at the both sides of the trench of the semiconductor. A first conductive layer pattern(106a) is formed on the tunnel insulating layer, and a dielectric film(110) is formed on the surface of the trench, the side wall of the tunnel insulating layer, and the first conductive layer pattern and side wall.</p> |
