| 摘要 |
<p>A high-performance NAND flash memory cell string, a cell device, and a switching device are provided to improve a coupling ratio between a control electrode and a floating electrode by changing a structure of a charge storage node. A cell device includes a semiconductor substrate(1), a transmission insulation film(7), a charge storage node(8), a control insulation film(9), and a control electrode(10). The transmission insulation film is formed on the semiconductor substrate. The charge storage node, the control insulation film, and the control electrode are successively formed on the transmission insulation film. The charge storage node comprises a plurality of layers. A dimension or volume of adjacent layers of the charge storage node is different. The cell device does not include a source and a drain. A switching device includes a source and a drain. The source and the drain of the switching device are not formed in a part connected to the cell device.</p> |
