NANODEVICE, TRANSISTOR COMPRISING THE NANODEVICE, METHOD FOR MANUFACTURING THE NANODEVICE, AND METHOD FOR MANUFACTURING THE TRANSISTOR

摘要

A nano device, a transistor including the same, and a manufacturing method thereof are provided to easily form a nano tube or a nano wall of a desired shape to a desired position by using a two-dimensional nano material. A nano device(100) includes a substrate(10), a mask layer(40), and a nano tube(50). The substrate includes a first substrate part and a second substrate part. The first substrate part is contacted with the nano tube. The second substrate part is surrounded by the first substrate part. Surface energy of the first substrate part is larger than surface energy of the second substrate part. The mask layer is formed on the substrate. The mask layer has one or more opening parts(401). The nano tube is formed on the substrate according to an edge of the opening part of the mask layer. A crystal structure of the substrate is the same as a crystal structure of the nano tube.