FABRICATION METHOD OF THIN FILM TRANSISTOR, ETCHING SOLUTION COMPOSITION USED THE METHOD

摘要

A fabrication method of a thin film transistor and a etching solution composition are provided to obtain high production yield by using a copper etchant, so there is no remainder in etching. In a fabrication method of a thin film transistor and a etching solution composition, a first and a second metal layers(120a, 120b) are etched by etchant composites, so gate electrode(120), a gate wiring or a scan wiring are formed. The etchant composites contains an inorganic salt oxidizer of a total weight of composition of 1- 20 weight%. The inorganic acid is included with 1-10 weight%, and a phosphate is included with 0.1-5 weight%. A first additive including a nitrogen atom is included with 0.2 -4 weight%, and the second additive including the nitrogen atom is included with 0.2-4 weight%.