| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process system which can uniformize the flow of gas and the form of a plasma, to provide a small processing system by the occupation area of the device, to reduce the loss of high-frequency power put in a high-frequency plasma process, and to generate and maintain the plasma efficiently. <P>SOLUTION: The processing system has a processing chamber 403, provided on the upper part of a transfer chamber 402 via a gate 416 (Figure 4), a stage 406, which is sealed from the outside and has a mounting part 412 for mounting a material 415 to be treated, a means 410 for making the mounting part 412 of the stage 406 move, in such a way that the part 412 goes in and out between the chambers 402 and the processing chamber 403 via the gate 416, while the chamber 402 is sealed from the outside, and means 413 and 414 for sealing the chambers 402 and the processing chamber 403, when the mounting part 412 is inside the processing chamber 403. <P>COPYRIGHT: (C)2009,JPO&INPIT |
