EEPROM AND ELECTRONIC DEVICE USING IT

摘要

PROBLEM TO BE SOLVED: To shorten a writing time or reduce a circuit area.

SOLUTION: Memory cells MC are arranged in a matrix at crossing points of a plurality of bit lines BL and a plurality of word lines WL. Memory transistors MT have sources connected to the corresponding bit lines BL and have floating gates between control gates and conduction channels of drains and sources. Selection transistors ST have sources connected to the drains of the memory transistors MT and gates connected to the corresponding word lines WL. The source lines SL commonly join sources of some of the memory transistors MT in the plurality of memory cells MC. A charging circuit 40a charges the source lines SL.

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